Theoretical evidence for efficient p-type doping of GaN using beryllium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118766
Reference5 articles.
1. Role of hydrogen in doping of GaN
2. First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe
3. Hydrogen in GaN: Novel Aspects of a Common Impurity
4. Theoretical study of H-P and H-B complexes in silicon
5. High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
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1. MOCVD Growth and Characterization of Be-Doped GaN;ACS Applied Electronic Materials;2022-08-08
2. Direct evidence of Be as an amphoteric dopant in GaN;Physical Review B;2022-05-27
3. Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping;Advanced Materials;2021-09-02
4. A first-principles understanding of point defects and impurities in GaN;Journal of Applied Physics;2021-03-21
5. Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices;Journal of Applied Physics;2020-06-07
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