Theoretical evidence for efficient p-type doping of GaN using beryllium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118766
Reference5 articles.
1. Role of hydrogen in doping of GaN
2. First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe
3. Hydrogen in GaN: Novel Aspects of a Common Impurity
4. Theoretical study of H-P and H-B complexes in silicon
5. High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
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2. MOCVD Growth and Characterization of Be-Doped GaN;ACS Applied Electronic Materials;2022-08-08
3. Direct evidence of Be as an amphoteric dopant in GaN;Physical Review B;2022-05-27
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