Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping
Author:
Affiliation:
1. School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr NW Atlanta GA 30332‐0250 USA
2. Lake Shore Cryotronics Inc. 575 McCorkle Blvd Westerville OH 43082 USA
Funder
Office of Naval Research
Air Force Office of Scientific Research
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202104497
Reference49 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices
3. GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
4. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy
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