A first-principles understanding of point defects and impurities in GaN
Author:
Affiliation:
1. Center for Computational Materials Science, United States Naval Research Laboratory, Washington, DC 20375, USA
2. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Funder
U.S. Department of Energy
Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0041506
Reference154 articles.
1. Prospects for LED lighting
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3. GaN-Based RF Power Devices and Amplifiers
4. On the Dopability of Semiconductors and Governing Material Properties
5. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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