MOCVD Growth and Characterization of Be-Doped GaN-Reference-Cited by-同舟云学术

MOCVD Growth and Characterization of Be-Doped GaN

Published:2022-08-08 Issue:8 Volume:4 Page:3780-3785
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

McEwen Benjamin¹^ORCID,Reshchikov Michael A.²,Rocco Emma¹,Meyers Vincent¹,Hogan Kasey¹,Andrieiev Oleksandr²,Vorobiov Mykhailo²,Demchenko Denis O.²,Shahedipour-Sandvik Fatemeh¹

Affiliation:

1. College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203-3613, United States

2. Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01276

Reference47 articles.

1. Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

2. Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg

3. Drain-Voltage-Induced Secondary Effects in AlGaN/GaN HEMTs With Integrated Body-Diode

4. Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency

5. Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth mechanism of a batch deposited SiC coating on large-size graphite plates based on multi-scale simulation;Journal of Crystal Growth;2024-11

2. Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering;Vacuum;2024-09

3. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of acceptors in GaN;Physical Review B;2024-07-15

4. Incorporation and Interaction of Co‐Doped Be and Mg in GaN Grown by Metal‐Organic Chemic Vapor Deposition;physica status solidi (b);2024-07-14

5. P-type Gallium nitride creation through O+ implantation;International Journal of Modern Physics B;2024-05-22