Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods
Author:
Affiliation:
1. Research and Development Department, BASiC Semiconductor Ltd., Shenzhen 518000, China
2. Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
Publisher
AIP Publishing
Subject
Automotive Engineering
Link
https://aip.scitation.org/doi/pdf/10.1063/10.0003763
Reference22 articles.
1. Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers
2. Silicon carbide: A unique platform for metal-oxide-semiconductor physics
3. Novel Designed SiC Devices for High Power and High Efficiency Systems
4. Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics
5. Improved Ni ohmic contact on n-type 4H-SiC
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3. Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing;Solid State Phenomena;2024-08-22
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