Affiliation:
1. Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
2. Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, University Sains Malaysia, Seberang Perai 14300, Pulau Pinang, Malaysia
Abstract
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.
Funder
Major Science and Technology Innovation Project of Shandong Province
Natural Science Foundation of Shandong Province
National Natural Science Foundation of China
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Reference32 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices;Godignon;IEEE Trans. Power Electron.,2014
2. Review of Silicon Carbide Power Devices and Their Applications;She;IEEE Trans. Ind. Electron.,2017
3. Zhe, C.F. (2003). Silicon Carbide: Materials, Processing & Devices, CRC Press.
4. Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC;Han;J. Vacuum Sci. Technol. B Microelectron Nanometer Struct. Process. Meas. Phenom.,2002
5. Ni/4H-SiC Ohmic Contact Formed by Laser Annealing;Liu;Semicond. Technol.,2016
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献