Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Author:

Li Guo1ORCID,Xu Mingsheng1,Zou Dongyang1,Cui Yingxin1,Zhong Yu1ORCID,Cui Peng1,Cheong Kuan Yew2,Xia Jinbao1,Nie Hongkun1,Li Shuqiang1,Linewih Handoko1,Zhang Baitao1,Xu Xiangang1,Han Jisheng1

Affiliation:

1. Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

2. Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, University Sains Malaysia, Seberang Perai 14300, Pulau Pinang, Malaysia

Abstract

In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.

Funder

Major Science and Technology Innovation Project of Shandong Province

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Reference32 articles.

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3. Zhe, C.F. (2003). Silicon Carbide: Materials, Processing & Devices, CRC Press.

4. Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC;Han;J. Vacuum Sci. Technol. B Microelectron Nanometer Struct. Process. Meas. Phenom.,2002

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