Novel Designed SiC Devices for High Power and High Efficiency Systems-Reference-Cited by-同舟云学术

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Novel Designed SiC Devices for High Power and High Efficiency Systems

Published:2015-02 Issue:2 Volume:62 Page:382-389
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mikamura Yasuki,Hiratsuka Kenji,Tsuno Takashi,Michikoshi Hisato,Tanaka So,Masuda Takeyoshi,Wada Keiji,Horii Taku,Genba Jun,Hiyoshi Toru,Sekiguchi Takeshi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7015642/06942216.pdf?arnumber=6942216

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. Comparative analysis and improved design of LLC inverters for induction heating;IET Power Electronics;2023-04-27

3. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

4. 4H-SiC Trench Gate Lateral MOSFET With Dual Source Trenches for Improved Performance and Reliability;IEEE Transactions on Device and Materials Reliability;2023-03

5. Silicon Carbide Power Devices;Springer Handbook of Semiconductor Devices;2022-11-11

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