Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4729045
Reference19 articles.
1. Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy
2. Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy
3. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
4. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
5. Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
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2. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22
3. In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications;Thin Solid Films;2020-08
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