Semi-quantitative analysis of the depth distribution of radiative recombination centers in silicon power devices by cross-sectional cathodoluminescence-Reference-Cited by-同舟云学术

Semi-quantitative analysis of the depth distribution of radiative recombination centers in silicon power devices by cross-sectional cathodoluminescence

Published:2012-08 Issue:3 Volume:112 Page:033507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sugie R.,Inoue K.,Yoshikawa M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4740228

Reference31 articles.

1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

2. The optical properties of luminescence centres in silicon

3. Intrinsic defects in silicon

4. Theory of positrons in solids and on solid surfaces

5. Cathodoluminescence Microscopy of Inorganic Solids

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