Analysis of micro LED chip after laser transfer
Author:
Affiliation:
1. Toray Research Center, Inc.,Otsu,Shiga,Japan
2. Toray Engineering Co., Ltd,Otsu,Shiga,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9795348/9795361/09795392.pdf?arnumber=9795392
Reference6 articles.
1. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy
2. Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence
3. Penetration and energy-loss theory of electrons in solid targets
4. Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors
5. Semi-quantitative analysis of the depth distribution of radiative recombination centers in silicon power devices by cross-sectional cathodoluminescence
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1. Challenges of high-yield manufacture in micro-light-emitting diodes displays: chip fabrication, mass transfer, and detection;Journal of Physics D: Applied Physics;2024-08-28
2. Research Progress of Micro-LED Display Technology;Crystals;2023-06-23
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