Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions-Reference-Cited by-同舟云学术

Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions

Published:2020-01 Issue:1 Volume:38 Page:012205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Sato Yoshihiro¹²,Shibata Satoshi³,Urabe Keiichiro¹^ORCID,Eriguchi Koji¹^ORCID

Affiliation:

1. Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto-daigaku Katsura, Nishikyo-ku, Kyoto 615-8540, Japan

2. Panasonic Corporation, 3-1-1, Yagumo-nakamachi, Moriguchi, Osaka 570-8501, Japan

3. Panasonic Corporation, 2-1-61, Shiromi, Chuo-ku, Osaka 540-6255, Japan

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5126344

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution;Journal of Vacuum Science & Technology B;2022-12

2. Modeling Plasma-Induced Damage During the Dry Etching of Silicon;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09

3. Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage;IEEE Journal of the Electron Devices Society;2022

4. Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage;Japanese Journal of Applied Physics;2021-03-23