Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage-Reference-Cited by-同舟云学术

Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage

Published:2022 Issue: Volume:10 Page:769-777
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Sato Yoshihiro¹^ORCID,Shibata Satoshi²,Yamada Takayoshi¹^ORCID,Nishimura Kazuko¹^ORCID,Yamasaki Masayuki¹^ORCID,Murakami Masashi¹^ORCID,Urabe Keiichiro³^ORCID,Eriguchi Koji³

Affiliation:

1. Panasonic Holdings Corporation, Osaka, Japan

2. Panasonic Operational Excellence Company Ltd., Osaka, Japan

3. Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09778191.pdf?arnumber=9778191

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5. Floating diffusion dark current and dark signal non-uniformity reduction for high dynamic range overflow collection pixels in high temperature applications;guidash;Proc Int Image Sensor Workshop,2019

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