Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution
-
Published:2022-12
Issue:6
Volume:40
Page:062209
-
ISSN:2166-2746
-
Container-title:Journal of Vacuum Science & Technology B
-
language:en
-
Short-container-title:Journal of Vacuum Science & Technology B
Author:
Sato Yoshihiro12ORCID, Shibata Satoshi3ORCID, Nishimura Kazuko2ORCID, Yamasaki Masayuki2ORCID, Murakami Masashi2ORCID, Urabe Keiichiro1ORCID, Eriguchi Koji1ORCID
Affiliation:
1. Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto-daigaku Katsura, Nishikyo-ku, Kyoto 615-8540, Japan 2. Panasonic Holdings Corporation, 3-1-1, Yagumo-nakamachi, Moriguchi, Osaka 570-8501, Japan 3. Panasonic Operational Excellence Co., Ltd., 4-33, Kitahamahigashi, Chuo-ku, Osaka 540-0031, Japan
Abstract
Understanding the effects of defect creation during plasma exposure is crucial for designing future ultra-low leakage current devices. Created defects play a role as carrier conduction paths, leading to an increase in the p–n junction leakage current (Δ Jpn). Herein, we propose a model focusing on the effects of created defects on Δ Jpn in combination with technology computer-aided design simulations. Three different defect spatial distributions, ndam( x), (linear, exponential, and Gaussian) were implemented for predicting Δ Jpn under various operating conditions. It was confirmed that Δ Jpn is strongly dependent on ndam( x), in addition to the total number of defects and generally accepted energy levels. The prediction model was implemented to experimentally assign the profile of defects created by an emerging mechanism—lateral straggling of incident ions—under fluorocarbon-containing plasma exposure, which is commonly employed in electrical contact opening steps. Devices with various lateral p–n junction widths and contact opening areas were exposed to the plasma. The experimental results of Δ Jpn revealed that the profile of defects in the lateral direction was exponential. The proposed model prediction scheme is useful for designing plasma processes and circuit layouts to realize future ultra-low leakage current devices.
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Reference61 articles.
1. Invention of the integrated circuit 2. S.Y. Wu et al., IEDM Technical Digest, 3–7 December 2016 (IEEE, San Francisco, CA, 2016), pp. 2.6.1–2.6.4. 3. C. Auth et al., IEDM Technical Digest, 2–6 December 2017 (IEEE, San Francisco, CA, 2017), pp. 29.1.1–29.1.4. 4. H.T. Lue et al., IEDM Technical Digest, 9–11 December 2013 (IEEE, San Francisco, CA, 2013), pp. 3.7.1–3.7.4. 5. 3-D NAND Technology Achievements and Future Scaling Perspectives
|
|