1. Watkins GD. In: Schröter W, editor. Electronic structure and properties of semiconductors [Chapter 3]. In: Cahn RW, Haasen P, Kramer EJ, editors. Materials science and technology, vol. 4. Wheinheim: VCH, 1991.
2. Watkins GD. In: Jackson KA, Schröter W, editors. Handbook of semiconductor technology, vol. 1. Weihneim: Wiley-VCH, 2000 [Chapter 3].
3. Watkins GD. In: Pantelides ST, editor. Deep centers in semiconductors. New York: Gordon and Breach, 1986 [Chapter 3].
4. Watkins GD. In: Diaz de la Rubia T, Stolk PA, Rafferty CS, editors. Defects and diffusion in silicon processing. MRS Symposium, vol. 469, Warrendale, 1997. p. 139.
5. Watkins GD. In: Hull R, editor. Properties of crystalline silicon. London: INSPEC, 1999 [Chapter 11.1].