Intrinsic defects in silicon-Reference-Cited by-同舟云学术

Intrinsic defects in silicon

Published:2000-08 Issue:4 Volume:3 Page:227-235
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Watkins George D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Watkins GD. In: Schröter W, editor. Electronic structure and properties of semiconductors [Chapter 3]. In: Cahn RW, Haasen P, Kramer EJ, editors. Materials science and technology, vol. 4. Wheinheim: VCH, 1991.

2. Watkins GD. In: Jackson KA, Schröter W, editors. Handbook of semiconductor technology, vol. 1. Weihneim: Wiley-VCH, 2000 [Chapter 3].

3. Watkins GD. In: Pantelides ST, editor. Deep centers in semiconductors. New York: Gordon and Breach, 1986 [Chapter 3].

4. Watkins GD. In: Diaz de la Rubia T, Stolk PA, Rafferty CS, editors. Defects and diffusion in silicon processing. MRS Symposium, vol. 469, Warrendale, 1997. p. 139.

5. Watkins GD. In: Hull R, editor. Properties of crystalline silicon. London: INSPEC, 1999 [Chapter 11.1].

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