Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3399776
Reference24 articles.
1. Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators
2. Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces
3. Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
4. Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As
5. Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
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