Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2-Reference-Cited by-同舟云学术

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

Published:2008-11-24 Issue:21 Volume:93 Page:212104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Afanas’ev V. V.,Badylevich M.,Stesmans A.,Brammertz G.,Delabie A.,Sionke S.,O’Mahony A.,Povey I. M.,Pemble M. E.,O’Connor E.,Hurley P. K.,Newcomb S. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3021374

Reference10 articles.

1. Advanced Gate Stacks for High-Mobility Semiconductors

2. Electron energy barriers at interfaces of GaAs(100) with LaAlO3 and Gd2O3

3. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

4. Internal photoemission in the anodic oxide/GaAs interface

5. Conduction band offset of HfO2 on GaAs

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