Materials Design on the Origin of Gap States in a High-κ/GaAs Interface-Reference-Cited by-同舟云学术

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Materials Design on the Origin of Gap States in a High-κ/GaAs Interface

Published:2015-09 Issue:3 Volume:1 Page:372-377
ISSN:2095-8099
Container-title:Engineering
language:en
Short-container-title:Engineering

Author:

Wang Weichao,Gong Cheng,Xiong Ka,Santosh K.C.,Wallace Robert M.,Cho Kyeongjae

Publisher

Elsevier BV

Subject

General Engineering,Energy Engineering and Power Technology,Materials Science (miscellaneous),General Chemical Engineering,Environmental Engineering,General Computer Science

Reference46 articles.

1. High-k materials and metal gates for CMOS applications;Robertson;Mat. Sci. Eng. R.,2015

2. First-principles modeling of high-k gate dielectric materials;Cho;Comp. Mater. Sci.,2002

3. First-principles study of transition-metal aluminates as high-k gate dielectrics;Haverty;Appl. Phys. Lett.,2002

4. Ab initio study of metal gate electrode work function;Park;Appl. Phys. Lett.,2005

5. First principles study of the HfO2/SiO2interface: Application to high-k gate structures;Ha;J. Appl. Phys.,2007

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Acceleration of material R&D process through rational design;Computational Materials Science;2019-04

2. (Invited) High-K Dielectrics: A Perspective on Applications from Silicon to 2D Materials;ECS Transactions;2017-08-16

3. Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics;ACS Omega;2017-06-19

4. Indium passivation impact on HfO2/GaAs interface: A first-principles study;Modern Physics Letters B;2017-06-14

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