Mechanisms of etching and polymerization in radiofrequency discharges of CF4–H2, CF4–C2F4, C2F6–H2, C3F8–H2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332193
Reference16 articles.
1. The design of plasma etchants
2. Mechanisms of radical production in CF3Cl, CF3Br, and related plasma etching gases: The role of added oxidants
3. Mechanisms of radical production in CF3Cl, CF3Br, and related plasma etching gases: The role of added oxidants
4. Metal-containing fluoropolymer films produced by simultaneous plasma etching and polymerization: The series of perfluoroalkanes nF2n+2 (n = 1,2,3,4)
5. Control of relative etch rates of SiO2 and Si in plasma etching
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