Low Global Warming C4H3F7O Isomers for Plasma Etching of SiO2 and Si3N4 Films-Reference-Cited by-同舟云学术

Low Global Warming C₄H₃F₇O Isomers for Plasma Etching of SiO₂ and Si₃N₄ Films

Published:2022-08-02 Issue:32 Volume:10 Page:10537-10546
ISSN:2168-0485
Container-title:ACS Sustainable Chemistry & Engineering
language:en
Short-container-title:ACS Sustainable Chem. Eng.

Author:

Kim Yongjae¹,Kim Seoeun²,Kang Hojin²,You Sanghyun³,Kim Changkoo³,Chae Heeyeop¹²^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

2. School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

3. Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Institute of Energy Technology Evaluation and Planning

Korea Institute for Advancement of Technology

Publisher

American Chemical Society (ACS)

Subject

Renewable Energy, Sustainability and the Environment,General Chemical Engineering,Environmental Chemistry,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acssuschemeng.2c01705

Reference75 articles.

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5. Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

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