All-epitaxial Co2FeSi/Ge/Co2FeSi trilayers fabricated by Sn-induced low-temperature epitaxy-Reference-Cited by-同舟云学术

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All-epitaxial Co2FeSi/Ge/Co2FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Published:2016-01-27 Issue:4 Volume:119 Page:045302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Kawano M.¹,Ikawa M.¹,Arima K.¹,Yamada S.¹,Kanashima T.¹^ORCID,Hamaya K.¹

Affiliation:

1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference64 articles.

1. Surfactants in epitaxial growth

2. Surfactant Epitaxy of Si on Si(111) Mediated by Sn

3. Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer I. Reflection electron microscope observation of the growth with and without a Sn layer mediate the step flow

4. Surfactant‐mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te

5. Influence of bismuth as a surfactant on the growth of germanium on silicon

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1. Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si;Materials Science in Semiconductor Processing;2024-04

2. Effect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi;Materials Science in Semiconductor Processing;2024-03

3. Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi;Applied Physics Letters;2021-11-08

4. Germanium pn junctions between ferromagnetic CoFe and Fe3Si layers for spintronic applications;Materials Science in Semiconductor Processing;2020-09

5. Spin transport in antimony-doped germanium detected using vertical spin-valve structures;Applied Physics Express;2020-02-01

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