Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer I. Reflection electron microscope observation of the growth with and without a Sn layer mediate the step flow
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Surfactants in epitaxial growth
2. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
3. In-situ UHV electron microscope study of metal-silicon surfaces
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