Influence of bismuth as a surfactant on the growth of germanium on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354409
Reference16 articles.
1. Strained-Layer Epitaxy of Germanium-Silicon Alloys
2. Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering
3. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
4. Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-xMBE Growth on Si(001) Substrates
5. Thin epitaxial Ge−Si(111) films: Study and control of morphology
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3. Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant;Optical Materials Express;2020-01-03
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