Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors-Reference-Cited by-同舟云学术

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Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

Published:2013-11-25 Issue:22 Volume:103 Page:223504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shin H. S.,Yum J. H.,Johnson D. W.,Harris H. R.,Hudnall Todd. W.,Oh J.,Kirsch P.,Wang W.-E.,Bielawski C. W.,Banerjee S. K.,Lee J. C.,Lee H. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4833815

Reference13 articles.

1. Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer

2. Novel Palladium Germanide Schottky Contact for High Performance Schottky Barrier Ge MOSFETs and Characterization of Its Leakage Current Mechanism

3. Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)

4. Nanometre-scale electronics with III–V compound semiconductors

5. A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors;Advanced Science;2022-06-16

2. Improving the water-resistance of MgO-based metal–insulator–metal capacitors by inserting a BeO thin film grown via atomic layer deposition;Journal of Materials Chemistry C;2022

3. Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer;Journal of Materials Chemistry C;2021

4. Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors;Journal of Nanoscience and Nanotechnology;2019-10-01

5. Thermal-assisted direct transfer of graphene onto flexible substrates;Materials Letters;2018-10

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