Novel Palladium Germanide Schottky Contact for High Performance Schottky Barrier Ge MOSFETs and Characterization of Its Leakage Current Mechanism-Reference-Cited by-同舟云学术

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Novel Palladium Germanide Schottky Contact for High Performance Schottky Barrier Ge MOSFETs and Characterization of Its Leakage Current Mechanism

Published:2012-07-01 Issue:7 Volume:12 Page:5347-5350
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Oh Se-Kyung,Shin Hong-Sik,Kang Min-Ho,Lee Ga-Won,Lee Hi-Deok

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs;Japanese Journal of Applied Physics;2014-07-24

2. Advances in Fractal Germanium Micro/Nanoclusters Induced by Gold: Microstructures and Properties;Journal of Nanoscience and Nanotechnology;2014-02-01

3. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors;Applied Physics Letters;2013-11-25

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