Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer-Reference-Cited by-同舟云学术

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

Published:2021 Issue:3 Volume:9 Page:851-859
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han Gyuseung¹²³⁴⁵^ORCID,Yeu In Won¹²³⁴^ORCID,Ye Kun Hee¹²³⁴⁵^ORCID,Lee Seung-Cheol⁶⁷⁸^ORCID,Hwang Cheol Seong⁵⁹¹⁰⁴^ORCID,Choi Jung-Hae¹²³⁴^ORCID

Affiliation:

1. Center for Electronic Materials

2. Korea Institute of Science and Technology

3. Seoul 02792

4. Korea

5. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center

6. Indo-Korea Science and Technology Center

7. Bengaluru

8. India

9. Seoul National University

10. Seoul 08826

Abstract

Through DFT calculations, a Be_0.25Mg_0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

Korea Institute of Science and Technology Information

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05071G

Reference27 articles.

1. Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

2. Thermal Conductivity of BeO Single Crystals

3. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

4. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates

5. Dynamical stability and phase transition of BeO under pressure

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