Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates-Reference-Cited by-同舟云学术

Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates

Published:2017-11-27 Issue:48 Volume:9 Page:41973-41979
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Seung Min¹²,Yum Jung Hwan³⁴,Yoon Seonno¹²,Larsen Eric S.³⁴,Lee Woo Chul⁵,Kim Seong Keun⁵^ORCID,Shervin Shahab⁶^ORCID,Wang Weijie⁶,Ryou Jae-Hyun⁶⁷,Bielawski Christopher W.³⁴⁸,Oh Jungwoo¹²^ORCID

Affiliation:

1. School of Integrated Technology, Yonsei University, Incheon 21983, Republic of Korea

2. Yonsei Institute of Convergence Technology, Incheon 21983, Republic of Korea

3. Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea

4. Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

5. Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 20792, Republic of Korea

6. Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006, United States

7. Materials Science and Engineering Program and Texas Center for Superconductivity at UH (TcSUH), University of Houston, Houston, Texas 77204, United States

8. Department of Energy Engineering, UNIST, Ulsan 44919, Republic of Korea

Funder

Ministry of Education

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Basic Science Institute

Ministry of Science, ICT and Future Planning

Texas Center for Superconductivity, University of Houston

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject