Phonon-limited electronic transport of two-dimensional ultrawide bandgap material h-BeO
Author:
Affiliation:
1. State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
Funder
Natural Science Foundation of Hebei Province
Department of Education of Hebei Province
China National Funds for Distinguished Young Scientists
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0022426
Reference42 articles.
1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
2. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
3. Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes
4. Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor
5. Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping
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