Electrical properties of MgO/GaN metal-oxide-semiconductor structures-Reference-Cited by-同舟云学术

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Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Published:2020-10 Issue: Volume:172 Page:107881
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ogidi-Ekoko Onoriode N.,Goodrich Justin C.,Howzen Alexandra J.,Peart Matthew R.,Strandwitz Nicholas C.,Wierer Jonathan J.,Tansu Nelson

Funder

National Science Foundation

Lehigh University

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. GaN technology for power electronic applications: a review;Flack;J Electron Mater,2016

2. Power semiconductor device figure of merit for high-frequency applications;Baliga;IEEE Electron Device Lett,1989

3. III-nitride photonics;Tansu;IEEE Photonics J,2010

4. Wierer JJ, Tsao JY, Sizov DS. The potential of III-nitride laser diodes for solid-state lighting. Phys Status Solidi (c) 2014;11(3–4):674–677.

5. GaN-based heterostructures for sensor applications;Stutzmann;Diam Relat Mater,2002

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1. Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices;IEEE Transactions on Electron Devices;2023-07

2. Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric;Materials Chemistry and Physics;2022-12

3. Post-annealing treatment in improving high dielectric constant MgO-based metal-oxide-semiconductor diodes;Applied Physics Letters;2022-06-20

4. Properties of Thin MgO Films on 6H-SiC and GaN: Photoelectron Studies;Acta Physica Polonica A;2022-02

5. Heterostructure from heteromixture: unusual OER activity of FeP and CoP nanostructures on physical mixing;Journal of Materials Chemistry A;2022

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