Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors
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Published:2019-10-01
Issue:10
Volume:19
Page:6036-6042
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Jang Won Douk1,
Yoon Young Jun1,
Cho Min Su1,
Kim Bo Gyeong1,
Kang d In Man1
Affiliation:
1. School of Electronics Engineering Kyungpook National University, Daegu 41566, Republic of Korea
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering