Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365599
Reference33 articles.
1. High-performance Si/SiGe n-type modulation-doped transistors
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures
4. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
5. High hole mobility in SiGe alloys for device applications
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1. Extended-Defect Aspects of Ge-on-Si Materials and Devices;Journal of The Electrochemical Society;2010
2. Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?;physica status solidi (c);2009-08
3. Ge–Si separate absorption and multiplication avalanche photodiode for Geiger mode single photon detection;Applied Physics Letters;2008-11-03
4. Germanium-Silicon Separate Absorption and Multiplication Avalanche Photodetectors Fabricated with Low Temperature High Density Plasma Chemical Vapor Deposited Germanium;MRS Proceedings;2007
5. Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer Substrates;Journal of The Electrochemical Society;2006
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