Effective mass of two‐dimensional electron gas in δ‐doped Al0.48In0.52As/Ga0.47In0.53As quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363247
Reference16 articles.
1. Activation characteristics of a long wavelength infrared hot‐electron transistor
2. Second subband population in δ‐doped Al0.48In0.52As/Ga0.47In0.53As heterostructures
3. Electronic subband studies in In0.52Al0.48As/InxGa1−xAs one‐side‐modulation‐doped asymmetric coupled double quantum wells
4. Electronic subband studies in In0.52Al0.48As/InxGa1−xAs one‐side‐modulation‐doped asymmetric coupled double quantum wells
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1. Spin dependence of electron effective masses in InGaAs/InAlAs quantum well;Journal of Applied Physics;2011-09-15
2. Spin splitting in AlxGa1−xN/GaN quasiballistic quantum wires;Journal of Applied Physics;2009-05
3. Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures;Applied Physics Letters;2002-04-15
4. Determination of the effective mass of the two-dimensional electron gas occupied at two subbands in In 0.65 Ga 0.35 As strained single quantum wells by using the fast Fourier transformation and the inverse fast Fourier transformation analyses;Journal of Physics and Chemistry of Solids;2000-11
5. Two-dimensional electron gas in δ-doped double quantum wells for photodetector application;Journal of Applied Physics;1997-06-15
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