Activation characteristics of a long wavelength infrared hot‐electron transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112327
Reference10 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
3. Detection wavelength of quantum‐well infrared photodetectors
4. Low dark current infrared hot‐electron transistor for 77 K operation
5. Long‐wavelength λc=18 μm infrared hot‐electron transistor
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1. Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy;Journal of Materials Science;2017-01-13
2. MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS;International Journal of High Speed Electronics and Systems;2002-09
3. Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers;SPIE Proceedings;2002-08-05
4. Electron transport mobility in a δ-doped double quantum well structure;Journal of Applied Physics;2000-09
5. Two-dimensional electron gas in δ-doped double quantum wells for photodetector application;Journal of Applied Physics;1997-06-15
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