Long‐wavelength λc=18 μm infrared hot‐electron transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355927
Reference6 articles.
1. Experimental and theoretical studies of the performance of quantum‐well infrared photodetectors
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4. 19 μm cutoff long‐wavelength GaAs/AlxGa1−xAs quantum‐well infrared photodetectors
5. High detectivity InGaAs base infrared hot‐electron transistor
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1. Intersubband absorption based upon modulation doped transistor heterostructures;SPIE Proceedings;2010-08-19
2. Intersubband absorption in modulation doped heterostructures;Journal of Applied Physics;2010-07
3. MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS;International Journal of High Speed Electronics and Systems;2002-09
4. Three-stack, three-color quantum-well infrared photodetector for mid-, long-, and very long-wavelength infrared detection;Applied Physics Letters;2001-10-29
5. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001
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