Electronic subband studies in In0.52Al0.48As/InxGa1−xAs one‐side‐modulation‐doped asymmetric coupled double quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114072
Reference24 articles.
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Electron Mobility in Al x Ga1−x As Based Square-Parabolic Double Quantum Well HEMT Structure − Effect of Asymmetric Doping Profile;physica status solidi (b);2017-08-23
3. Electronic parameters and electronic structures in modulation-doped highly strained InxGa1−xAs/InyAl1−yAs coupled double quantum wells;Solid State Communications;2004-02
4. 1.55 µm Wavelength Strain-Compensated InxGa1-xAs/InyAl1-yAs Electroabsorption Modulators with High Extinction Ratio and Low Polarization-Dependent Loss;Japanese Journal of Applied Physics;2001-05-15
5. Determination of the effective mass of the two-dimensional electron gas occupied at two subbands in In 0.65 Ga 0.35 As strained single quantum wells by using the fast Fourier transformation and the inverse fast Fourier transformation analyses;Journal of Physics and Chemistry of Solids;2000-11
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