Determination of the effective mass of the two-dimensional electron gas occupied at two subbands in In 0.65 Ga 0.35 As strained single quantum wells by using the fast Fourier transformation and the inverse fast Fourier transformation analyses
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference15 articles.
1. Time‐of‐flight measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure
2. Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor
3. Narrowing of the intersubband electroluminescent spectrum in coupled‐quantum‐well heterostructures
4. Electronic subband studies in In0.52Al0.48As/InxGa1−xAs one‐side‐modulation‐doped asymmetric coupled double quantum wells
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3. Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors;International Journal of Modern Physics B;2020-03-09
4. The Influence of Temperature on Magnetic Quantum Effects in Semiconductor Structures;J APPL SCI ENG;2020
5. Cyclotron and combined phonon-assisted resonances in the double-well heterostructure In0.65Ga0.35As/In0.52Al0.48As at megagauss magnetic fields;Physical Review B;2018-12-18
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