Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111732
Reference19 articles.
1. Modulation spectroscopy as a tool for electronic material characterization
2. Electron beam electroreflectance studies of GaAs and CdTe surfaces
3. Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system
4. Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructures
5. Electromodulation spectroscopy of confined systems
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1. Atomic arrangements of a CuAu-I type ordered structure in strained InxGa1 − xAs/InyAl1 − yAs multiple quantum wells;Journal of Materials Science;2005-07
2. Non-destructive, room temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy;physica status solidi (a);2005-05
3. Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures;Materials Science and Engineering: B;2001-03
4. Determination of the effective mass of the two-dimensional electron gas occupied at two subbands in In 0.65 Ga 0.35 As strained single quantum wells by using the fast Fourier transformation and the inverse fast Fourier transformation analyses;Journal of Physics and Chemistry of Solids;2000-11
5. Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures;Journal of Applied Physics;2000-08
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