Plasma cleaning and nitridation of sapphire (α-Al2O3) surfaces: New evidence from in situ real time ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1305926
Reference38 articles.
1. Substrate Reactivity and “Controlled Contamination” in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
2. Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation
3. Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
4. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
5. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
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