Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119532
Reference12 articles.
1. Emerging gallium nitride based devices
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
4. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
5. Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α -Al2O3Substrate
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