Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors
Reference23 articles.
1. Nagata T, Volk J, Yamashita Y, Yoshikawa H, Haemori M, Hayakawa R, Yoshitake M, Ueda S, Kobayashi K, Chikyow T (2009) Interface structure and the chemical states of Pt film on polar-ZnO single crystal. Appl Phys Lett 94:221904.
https://doi.org/10.1063/1.3149701
2. Saito M, Wagner T, Richter G, Ruhle M (2009) High-resolution TEM investigation of structure and composition of polar Pd/ZnO interfaces. Phys Rev B 80:134110.
https://doi.org/10.1103/PhysRevB.80.134110
3. Allen MW, Swartz CH, Myers TH, Veal TD, McConville CF, Durbin SM (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Phys Rev B 81:075211.
https://doi.org/10.1103/PhysRevB.81.075211
4. Ohashi N, Adachi Y, Osawa T, Matsumoto K, Sakaguchi I, Haneda H, Ueda S, Yoshikawa H, Kobayashi K (2009) Polarity-dependent photoemission spectra of wurtzite-type zinc oxide. Appl Phys Lett 94:122102.
https://doi.org/10.1063/1.3103271
5. Nagata T, Bierwagen O, White ME, Tsai MY, Speck JS (2010) Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films. J Appl Phys 107:033707.
https://doi.org/10.1063/1.3298467