Improved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer-Reference-Cited by-同舟云学术

Improved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer

Published:2022-06 Issue: Volume:262 Page:111830
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ünal Derya,Varol Songül Fiat,Brault Julien,Chenot Sébastien,Al Khalfioui Mohamed,Merdan Ziya

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference69 articles.

1. A multispectral linear optical sweep source, based on tunable InGaN/GaN QW LEDs

2. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

3. Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays

4. Characteristic enhancement of white LED lamp using low temperature co-fired ceramic-chip on board package

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