The relationship between annealing and nitrogen flow ratios during magnetron sputtering of AlN films-Reference-Cited by-同舟云学术

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The relationship between annealing and nitrogen flow ratios during magnetron sputtering of AlN films

Published:2023-01-16 Issue:2 Volume:129 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Han Yaqi,Zhang Hui,Xie Xinjian,Liu Zefeng,Geng Kangqi,Yang Yun,Zhang Yushuo,Chen Guifeng

Funder

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-022-06311-4.pdf

Reference33 articles.

1. L. Zhang, R. Takei, J. Lu, N. Makimoto, T. Itoh, T. Kobayashi, Development of energy harvesting MEMS vibration device sensor with wideband response function in low-frequency domain. Microsyst. Technol. 28, 1389–1397 (2019)

2. X. Yi, L. Zhao, P. Ouyang, H. Liu, T. Zhang, G. Li, High-quality film bulk acoustic resonators fabricated on AlN films grown by a new two-step method. IEEE Electron Device Lett. 43, 942–945 (2022)

3. N.A. Strnad, W.L. Sarney, G.B. Rayner, R.R. Benoit, G.R. Fox, R.Q. Rudy, T.J. Larrabee, J. Shallenberger, J.S. Pulskamp, Plasma enhanced atomic layer deposition of textured aluminum nitride on platinized substrates for MEMS. J. Vac. Sci. Technol. A 40, 042403 (2022)

4. K. Li, F. Wang, M. Deng, K. Hu, D. Song, Y. Hao, H. Di, K. Dong, S. Yan, Z. Song, K. Zhang, Microstructure and bending piezoelectric characteristics of AlN film for high-frequency flexible SAW devices. J. Mater. Sci. Mater. Electron. 32, 13146–13155 (2021)

5. F. Wang, F. Xiao, D. Song, L. Qian, Y. Feng, B. Fu, K. Dong, C. Li, K. Zhang, Research of micro area piezoelectric properties of AlN films and fabrication of high frequency SAW devices. Microelectron. Eng. 199, 63–68 (2018)

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1. Relationship between Annealing and V/III Ratios during MNVPE of AlN Films;Crystal Growth & Design;2024-03-21

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