Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90425
Reference11 articles.
1. Optimum semiconductor for microwave devices
2. Structures Grown by Molecular Beam Epitaxy
3. Molecular beam epitaxial GaAs layers for MESFET’s
4. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
5. Molecular Beam Epitaxial Growth of InAs
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1. Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires;Physical Review B;2018-03-22
2. InAs/GaAs (111)A heteroepitaxial systems;Physica E: Low-dimensional Systems and Nanostructures;2004-07
3. Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
4. Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001);Materials Science and Engineering: B;2000-09
5. Thickness-dependent electron accumulation in InAs thin films onGaAs(111)A: A scanning-tunneling-spectroscopy study;Physical Review B;1998-08-15
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