Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires-Reference-Cited by-同舟云学术

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Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires

Published:2018-03-22 Issue:11 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Becker J.,Morkötter S.,Treu J.,Sonner M.,Speckbacher M.,Döblinger M.,Abstreiter G.,Finley J. J.,Koblmüller G.

Funder

Deutsche Forschungsgemeinschaft

Technische Universität München

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.115306/fulltext

Reference77 articles.

1. An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires

2. Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?

3. Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)

4. Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters

5. High optical quality single crystal phase wurtzite and zincblende InP nanowires

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