Thickness-dependent electron accumulation in InAs thin films onGaAs(111)A: A scanning-tunneling-spectroscopy study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.R4219/fulltext
Reference28 articles.
1. Molecular Beam Epitaxial Growth of InAs
2. Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam deposition
3. Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy
4. Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy
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