Optimum semiconductor for microwave devices
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19690238?crawler=true&mimetype=application/pdf
Reference10 articles.
1. FAWCETT, W., and RUCH, J.: to be published
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Simulation studies of liquid phase epitaxial growth of In1 −xGaxAs;Materials Science and Engineering: B;1996-06
2. Semiconductors for high‐voltage, vertical channel field‐effect transistors;Journal of Applied Physics;1982-03
3. Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process;Journal of The Electrochemical Society;1982-02-01
4. Dependence of the electron drift velocity on the electrical field magnitude in GaxIn1?xAs, computed by the Monte Carlo method;Soviet Physics Journal;1981-04
5. Transferred-electron oscillation in n-In0.53Ga0.47As;Solid-State Electronics;1980-09
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