Comparison of high quality (111)B and (100) AlGaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106409
Reference9 articles.
1. Summary Abstract: High purity molecular beam epitaxy grown AlGaAs
2. Photoluminescence killer center in AlGaAs grown by molecular‐beam epitaxy
3. Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
4. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
5. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
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