Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4711783
Reference24 articles.
1. Two-dimensional electrons occupying multiple valleys in AlAs
2. Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells
3. Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells
4. Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass
5. Ballistic Electron Transport in AlAs Quantum Wells
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1. Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control;Journal of Crystal Growth;2022-12
2. Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate;Physical Review Applied;2022-09-29
3. Flat Metamorphic Inalas Buffer Layer on Gaas(111)A Misoriented Substrates by Growth Kinetics Control;SSRN Electronic Journal;2022
4. Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates;Applied Physics Letters;2021-03-29
5. Selective Etching of (111)B‐Oriented Al x Ga 1− x As‐Layers for Epitaxial Lift‐Off;physica status solidi (a);2020-11-02
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