Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3651393
Reference16 articles.
1. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
2. Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
3. Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
4. Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
5. Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
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