Effect of graded Al content in the last quantum barrier on the luminescence properties of ultraviolet InGaN/AlGaN multiple quantum wells
Author:
Funder
National Natural Science Foundation of China
Key Research and Development Projects of Shaanxi Province
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials
Reference34 articles.
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3. Improvement of radiative recombination rate and efficiency droop of InGaN light emitting diodes with In-component-graded InGaN barrier;Jia;Phys. Status Solidi,2021
4. Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells;Hou;Results Phys.,2023
5. High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells;Li;J. Mater. Chem. C,2020
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