Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1535734
Reference36 articles.
1. Undoped AlGaN/GaN HEMTs for microwave power amplification
2. Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes
3. Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy
4. Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence
5. Growth and device applications of III-nitrides by MBE
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